ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,609, issued on June 23, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with programmable insulatin... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,610, issued on June 23, was assigned to CXMT Corp. (Hefei City, China). "Semiconductor structure and memory" was invented by Qilong Wu (Hef... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,611, issued on June 23, was assigned to CHENGDU PBM TECHNOLOGY LTD. (Chengdu, China). "Method for manufacturing high-density three-dimensio... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,612, issued on June 23, was assigned to Tower Semiconductor Ltd. (Migdal Haemek, Israel). "Asymmetric single-channel floating gate memristo... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,613, issued on June 23, was assigned to STMICROELECTRONICS (ROUSSET) SAS (Rousset, France). "Bit-erasable embedded select in trench memory ... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,614, issued on June 23, was assigned to Micron Technology Inc. (Boise, Idaho). "Pillar memory device having a hollow central region and met... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,615, issued on June 23, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor device" was invented by Young Geun Jang (Hwa... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,616, issued on June 23, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Nonvolatile memory device with integrated backgate and met... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,617, issued on June 23, was assigned to Micron Technology Inc. (Boise, Idaho). "Microelectronic devices with increased grain size" was inve... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,618, issued on June 23, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Three-dimensional memory device including a Schottky... Read More